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SiC reactive sintering furnace
Jan 18, 2018


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Technical parameters:

The SiC Si3N4 sintering furnace can be used for reactive sintering, pressureless sintering, recrystallization sintering and hot isostatic pressing sintering of SiC ceramic products. It can also be used for sintering other ceramic products such as silicon nitride.



Product


Technical parameters:

The SiC Si3N4 sintering furnace can be used for reactive sintering, pressureless sintering, recrystallization sintering and hot isostatic pressing sintering of SiC ceramic products. It can also be used for sintering other ceramic products such as silicon nitride.

The silicon carbide sintering furnace is heated by resistance, setting temperature zone compensation or multi zone temperature control, and the temperature uniformity is good.

The SiC silicon nitride sintering furnace can work for a long time at 2400℃by using ultra high temperature and high current technology.

The SiC silicon nitride sintering furnace adopts special high temperature infrared measurement technology, and its temperature control is accurate and the error is small.

The silicon nitride silicon carbide sintering furnace configuration is equipped with exclusive seal muffle, silicon steam generated has a small pollution on the heater and insulating materials.

The silicon carbide sinter furnace adopts special tail gas treatment device, which is environmentally friendly and easy to clean up.

The degreasing system can be selected to achieve the disposable treatment of ceramic products with skimmed sintering.

 

Specification:

Model

VHS-40/40/80-2400

VHS-80/80/120-2400

VHS-100/100/150-2400

VHS-120/120/250-2400

Workspace

W×H×L(mm)

400×400×800

800×800×1200

1000×1000×1500

1200×1200×2500

Max temp(℃)

1500

1500

1500

1500

Temp uniformity(℃)

±7.5

±7.5

±7.5

±10

Ultimate vacuum degree(Pa)

50

50

50

50

Pressure rise rate(Pa/h)

3

3

3

3


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